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| NTD65N03R Power MOSFET 25 V, 65 A, Single N-Channel, DPAK Features * * * * Low RDS(on) Ultra Low Gate Charge Low Reverse Recovery Charge Pb-Free Packages are Available V(BR)DSS 25 V http://onsemi.com RDS(on) TYP 6.5 mW @ 10 V 9.7 mW @ 4.5 V N-Channel D ID MAX 65 A Applications * Desktop CPU Power * DC-DC Converters * High and Low Side Switch MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (RqJC) Limited by Die Continuous Drain Current (RqJC) Limited by Wire Power Dissipation (RqJC) Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State Steady State TC = 25C TC = 85C TC = 25C ID Symbol VDSS VGS ID Value 25 "20 65 45 32 A Unit V V A G S 4 4 12 3 1 1 2 3 CASE 369D DPAK (Straight Lead) STYLE 2 23 4 TC = 25C TA = 25C TA = 85C TA = 25C TA = 25C Steady State TA = 85C TA = 25C PD ID PD ID PD IDM TJ, Tstg dv/dt IS EAS 50 11.4 8.9 1.88 9.5 7.4 1.3 130 -55 to 175 2.0 2.1 71.7 W A W A W A C V/ns mJ CASE 369AA DPAK (Bend Lead) STYLE 2 CASE 369AC 3 IPAK (Straight Lead) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 65 N03G 3 Source 1 Gate 3 Source 2 Drain = Year = Work Week = Device Code = Pb-Free Package Publication Order Number: NTD65N03R/D 4 Drain YWW 65 N03G 1 Gate 2 Drain Y WW 65N03 G tp = 10 ms Operating Junction and Storage Temperature Drain-to-Source (dv/dt) Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 12 A, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) A TL 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.15 in sq) [1 oz] including traces. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. (c) Semiconductor Components Industries, LLC, 2006 1 July, 2006 - Rev. 3 NTD65N03R THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Case (Drain) Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - Steady State (Note 4) Symbol RqJC RqJA RqJA Value 2.5 80 115 Unit C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance 3. 4. 5. 6. LS LD LG RG TA= 25C 2.49 0.02 3.46 1.75 W nH VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 20 A VGS = 0 V, IS = 20 A TJ = 25C TJ = 125C 0.85 0.72 28.8 12.8 16 20 nC ns 1.1 V td(on) tr td(off) tf VGS = 10 V, VDS = 25 V, ID = 30 A, RG = 3.0 W 6.3 18.6 20.3 8.8 ns VGS(TH) VGS(TH)/TJ RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD VGS = 5.0 V, VDS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 30 A VDS = 15 V, ID = 15 A CHARGES, CAPACITANCES AND GATE RESISTANCE 1177 VGS = 0 V, f = 1.0 MHz, VDS = 20 V 555 218 12.2 1.5 2.95 6.08 16 nC 1400 pF VGS = VDS, ID = 250 mA 1.0 1.74 4.8 6.5 9.7 27 8.4 14.6 mHos 2.0 V mV/C mW V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 20 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 25 29.5 19.2 1.5 10 "100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = "20 V Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.15 in sq [1 oz] including traces). Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD65N03R 140 ID, DRAIN CURRENT (AMPS) 120 100 80 60 40 20 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 10 V 7V 6V 5.5 V 5V 140 TJ = 25C 4.5 V 4.2 V 4V 3.8 V 3.6 V 3.4 V 3.2 V 3V 2.8 V ID, DRAIN CURRENT (AMPS) 120 100 80 60 40 20 0 0 1 2 TJ = 125C TJ = 25C TJ = -55C 3 4 5 6 VDS 10 V VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.03 VGS = 10 V 0.03 VGS = 4.5 V 0.026 0.022 0.018 0.014 0.01 0.006 0.002 0 20 40 60 80 100 120 140 ID, DRAIN CURRENT (A) TJ = 150C TJ = 125C TJ = 25C TJ = -55C 0.026 0.022 0.018 0.014 TJ = 150C 0.01 TJ = 125C TJ = 25C TJ = -55C 0 20 40 60 80 100 120 140 0.006 0.002 ID, DRAIN CURRENT (A) Figure 3. On-Resistance versus Drain Current and Temperature RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 4. On-Resistance versus Drain Current and Temperature 1.6 ID = 30 A VGS = 10 V 10000 VGS = 0 V 1.4 IDSS, LEAKAGE (nA) TJ = 150C 1.2 1000 1.0 0.8 TJ = 125C 0.6 -50 100 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-To-Source Leakage Current versus Voltage http://onsemi.com 3 NTD65N03R VGS = 0 V 2000 C, CAPACITANCE (pF) 1600 1200 800 400 0 0 4 8 12 16 20 DRAIN-TO-SOURCE VOLTAGE (V) Ciss TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (V) 2400 8 6 QT 4 Q1 Q2 VGS Coss Crss 2 ID = 30 A TJ = 25C 0 0 4 8 12 16 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 1000 IS, SOURCE CURRENT (AMPS) VDS = 10 V ID = 35 A VGS = 10 V t, TIME (ns) 100 70 VGS = 0 V 60 50 40 30 20 TJ = 150C 10 0 1 10 RG, GATE RESISTANCE (W) 100 0 0.2 0.4 0.6 TJ = 25C 0.8 1 tf td(off) tr 10 td(on) 1 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 100 I D, DRAIN CURRENT (AMPS) 10 ms 100 ms 10 VGS = 20 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.1 1 ms 10 ms dc 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NTD65N03R ORDERING INFORMATION Order Number NTD65N03R NTD65N03RG NTD65N03RT4 NTD65N03RT4G NTD65N03R-1 NTD65N03R-1G NTD65N03R-35 NTD65N03R-35G Package DPAK-3 DPAK-3 (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK-3 Straight Lead DPAK-3 Straight Lead (Pb-Free) DPAK Straight Lead Trimmed (3.5 0.15 mm) DPAK Straight Lead Trimmed (3.5 0.15 mm) (Pb-Free) Shipping 75 Units / Rail 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel 75 Units / Rail 75 Units / Rail 75 Units / Rail 75 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTD65N03R PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA-01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E A S 1 2 3 Z H U F L D 2 PL J DIM A B C D E F H J L R S U V Z 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTD65N03R PACKAGE DIMENSIONS DPAK CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 IPAK, STRAIGHT LEAD CASE 369AC-01 ISSUE O B V R C E NOTES: 1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE IS ON TOP OF DAMBAR POSITION. 4. DIMENSION A DOES NOT INCLUDE DAMBAR POSITION OR MOLD GATE. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.043 0.090 BSC 0.034 0.040 0.018 0.023 0.134 0.142 0.180 0.215 0.035 0.050 0.000 0.010 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.09 2.29 BSC 0.87 1.01 0.46 0.58 3.40 3.60 4.57 5.46 0.89 1.27 0.000 0.25 A SEATING PLANE DIM A B C D E F G H J K R V W W F G K J H D 3 PL 0.13 (0.005) W http://onsemi.com 7 NTD65N03R ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 8 NTD65N03R/D |
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